Peculiarities of pore initiation in р-type silicon during its electrochemical etching
نویسندگان
چکیده
منابع مشابه
Fabrication of p-Type Nano-porous Silicon Prepared by Electrochemical Etching Technique in HF-Ethanol and HF-Ethanol-H2O Solutions
Nano-porous silicon were simply prepared from p-type single crystalline silicon wafer by electrochemical etching technique via exerting constant current density in two different HF-Ethanol and HF-Ethanol-H2O solutions. The mesoporous silicon layers were characterized by field emission scanning electron microscopy and scanning electron microscopy. The results demonstrate that the width of nano-p...
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In the presented work the dynamic simulation of a silicon anodization process is performed. Two mechanisms of etch form development (diffusion in electrolyte, current flow) are considered and simulated. Influence of electrolyte conductivity and radius of the opening in the masking layer is discussed.
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The growth mechanism of currentline-oriented pores in n-type InP has been studied by Fast-Fourier-Transform Impedance Spectroscopy (FFT IS) applied in situ during pore etching and by theoretical calculations. Several pore growth parameters could thus be extracted in situ that are otherwise not obtainable. These include the space-charge-region (SCR) width, the SCR potential, the capacitance at t...
متن کاملIn-plane refractive-index anisotropy in porous silicon layers induced by polarized illumination during electrochemical etching
Porous silicon sPSid layers have been anodically etched under polarized illumination, and the degree of linear polarization of their photoluminescence (PL) was measured. The etching conditions were chosen such that the resulting PSi layers were thin enough for interference fringes to appear in their PL spectra. Experimental results show a sinusoidal variation in the degree of linear polarizatio...
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Porous silicon layers have been prepared from n-type silicon wafers of (100) orientation. SEM, FTIR and PL have been used to characterize the morphological and optical properties of porous silicon. The influence of varying etching time in the anodizing solution, on structural and optical properties of porous silicon has been investigated. It is observed that pore size increases with etching tim...
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ژورنال
عنوان ژورنال: Доклады Академии наук
سال: 2019
ISSN: 0869-5652
DOI: 10.31857/s0869-5652487132-35